Single-electron transistors based on self-assembled silicon-on-insulator quantum dots

Abstract

We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.

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Titel Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
Medien Appl. Phys. Lett.
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Heft 14
Band 96
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Verfasser/Herausgeber Prof. Dr. Conrad R. Wolf, Klaus Thonke, Rolf Sauer
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Veröffentlichungsdatum 2010-04-05
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Zitation Wolf, Conrad R.; Thonke, Klaus; Sauer, Rolf (2010): Single-electron transistors based on self-assembled silicon-on-insulator quantum dots. Appl. Phys. Lett. 96, 142108 (14). DOI: 10.1063/1.3383235