SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes
Abstract
In this paper we present a novel approach to fabricate single-electron devices utilizing different self-organization and self-alignment effects. Silicon quantum dots (QDs) are obtained employing reactive ion etching (RIE) into a silicon-on-insulator (SOI) substrate with a self-assembled etch mask. Electrodes with nanometer separation are fabricated and aligned to the QDs by means of a controlled electromigration process. The tunneling rates of the devices are defined by the native oxide covering the silicon QDs and can be adjusted by self-limiting thermal oxidation. The devices show clear Coulomb blockade behavior as well as Coulomb staircase features. In some samples also a gate influence is present giving rise to Coulomb diamonds in the differential conductance diagram.
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| Titel | SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes |
|---|---|
| Medien | MRS Online Proceedings Library |
| Verlag | --- |
| Heft | --- |
| Band | 958 |
| ISBN | --- |
| Verfasser/Herausgeber | Prof. Dr. Conrad R. Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke, Rolf Sauer |
| Seiten | --- |
| Veröffentlichungsdatum | 2006-11-26 |
| Projekttitel | --- |
| Zitation | Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes. MRS Online Proceedings Library 958, 1021. DOI: 10.1557/PROC-0958-L10-21 |