SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes

Abstract

In this paper we present a novel approach to fabricate single-electron devices utilizing different self-organization and self-alignment effects. Silicon quantum dots (QDs) are obtained employing reactive ion etching (RIE) into a silicon-on-insulator (SOI) substrate with a self-assembled etch mask. Electrodes with nanometer separation are fabricated and aligned to the QDs by means of a controlled electromigration process. The tunneling rates of the devices are defined by the native oxide covering the silicon QDs and can be adjusted by self-limiting thermal oxidation. The devices show clear Coulomb blockade behavior as well as Coulomb staircase features. In some samples also a gate influence is present giving rise to Coulomb diamonds in the differential conductance diagram.

more

Mehr zum Titel

Titel SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes
Medien MRS Online Proceedings Library
Verlag ---
Heft ---
Band 958
ISBN ---
Verfasser/Herausgeber Prof. Dr. Conrad R. Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke, Rolf Sauer
Seiten ---
Veröffentlichungsdatum 2006-11-26
Projekttitel ---
Zitation Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-Based Silicon Quantum Dots Contacted by Self-Aligned Nano-Electrodes. MRS Online Proceedings Library 958, 1021. DOI: 10.1557/PROC-0958-L10-21