Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
Abstract
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
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| Titel | Single-electron transistors based on self-assembled silicon-on-insulator quantum dots |
|---|---|
| Medien | Appl. Phys. Lett. |
| Heft | 14 |
| Band | 96 |
| Verfasser | Prof. Dr. Conrad R. Wolf, Klaus Thonke, Rolf Sauer |
| Seiten | 142108 |
| Veröffentlichungsdatum | 05.04.2010 |
| Zitation | Wolf, Conrad R.; Thonke, Klaus; Sauer, Rolf (2010): Single-electron transistors based on self-assembled silicon-on-insulator quantum dots. Appl. Phys. Lett. 96 (14), 142108. DOI: 10.1063/1.3383235 |